ST has announced two new high-speed half-bridge gate drivers that bring GaN efficiency, thermal performance, and miniaturisation to a broad range of power and motion-control applications. The ...

A team of researchers led by the University of Pittsburgh demonstrated a programmable superconducting diode at the LaAlO 3 /KTaO 3 (LAO/KTO) interface, an advance that holds potential to enhance/help ...

Automotive-grade SOD-128 package offers low thermo-mechanical stress and higher performance Taiwan Semiconductor has added to its growing series of AEC-Q-qualified 1200V-rated SiC Schottky diodes with ...

Jake Fillery is an Evergreen Editor for GameRant who has been writing lists, guides, and reviews since 2022. With thousands of engaging articles and guides, Jake loves conversations surrounding all ...

The CoolGaN™ Drive HB 600 V G5 from Infineon Technologies AG is a family of integrated half-bridge devices that combine two 600 V GaN switches with high- and low-side gate drivers and a bootstrap ...

There is a near-endless number of resources to find in Marathon, and knowing where the real value lies is a trick in and of itself. In this guide, I'll show you where to go to find the all-important ...

New devices integrate two 600V GaN switches in a half-bridge with gate drivers and a bootstrap diode Infineon has expanded its CoolGaN portfolio with the CoolGaN Drive HB 600V G5 product family. The ...

Abstract: The bulk-silicon bootstrap diode (BSD) is difficult to be integrated in 1200 V high voltage integrated circuits (HVIC), because of the large substrate leakage current. In this work, a new ...

As any CEO will know, when you’re bootstrapping a company, the playbook looks very different than it does for a venture-backed startup. Every dollar matters, every hire matters, and every wrong turn ...

The integrated GaN half-bridge gate drivers bring flexibility and smart protection to a wide range of applications running on industrial or telecom bus voltages up to 220 V. The STDRIVEG210 excels in ...